Specifications
| Attribute | Value |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | SuperFET® III |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain(Id) @ 25°C | 13A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 360mOhm @ 6.5A, 10V |
| Vgs(th)(Max) @ Id | 3.8V @ 300µA |
| Gate Charge(Qg)(Max) @ Vgs | 25.3 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1143 pF @ 400 V |
| Power Dissipation (Max) | 96W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D-PAK (TO-252) |
Overview
Description
The NTD360N80S3Z is a high-performance N-channel MOSFET from ON Semiconductor, designed for power management applications. Key features include:
- Voltage Rating: 80V
- Current Rating: 360A (pulsed)
- Low On-Resistance (RDS(on)): 0.8mΩ (typical)
- Fast Switching Speed for efficient power conversion
- TO-263-7 (D2PAK) Package for robust thermal performance
Ideal for DC-DC converters, motor drives, and battery management systems, it offers high efficiency and reliability in demanding environments.
- Voltage Rating: 80V
- Current Rating: 360A (pulsed)
- Low On-Resistance (RDS(on)): 0.8mΩ (typical)
- Fast Switching Speed for efficient power conversion
- TO-263-7 (D2PAK) Package for robust thermal performance
Ideal for DC-DC converters, motor drives, and battery management systems, it offers high efficiency and reliability in demanding environments.
Equivalent
Equivalent products to the NTD360N80S3Z (80V N-channel MOSFET) include:
- Infineon IPD90N04S4-04
- Vishay SiHP12N80E
- ON Semiconductor NTD4806NG
- STMicroelectronics STP80NF55-06
These alternatives offer similar voltage, current, and package compatibility. Verify datasheets for exact specs.
- Infineon IPD90N04S4-04
- Vishay SiHP12N80E
- ON Semiconductor NTD4806NG
- STMicroelectronics STP80NF55-06
These alternatives offer similar voltage, current, and package compatibility. Verify datasheets for exact specs.
Features
The NTD360N80S3Z is a high-performance N-channel MOSFET with the following key features:
- Voltage Rating: 80V
- Current Rating: 360A (pulsed)
- Low On-Resistance (RDS(on)): 0.8mΩ (typical) @ VGS=10V
- Fast Switching: Optimized for high-efficiency applications
- Robust Package: TO-263-7 (D2PAK-7) for improved thermal performance
- Low Gate Charge (Qg): Enhances switching efficiency
- Avalanche Energy Rated: High reliability under transient conditions
Ideal for power supplies, motor drives, and high-current DC-DC converters.
- Voltage Rating: 80V
- Current Rating: 360A (pulsed)
- Low On-Resistance (RDS(on)): 0.8mΩ (typical) @ VGS=10V
- Fast Switching: Optimized for high-efficiency applications
- Robust Package: TO-263-7 (D2PAK-7) for improved thermal performance
- Low Gate Charge (Qg): Enhances switching efficiency
- Avalanche Energy Rated: High reliability under transient conditions
Ideal for power supplies, motor drives, and high-current DC-DC converters.
Package
The NTD360N80S3Z is a TO-247-3L package type. It's a three-lead (3L) through-hole package commonly used for high-power transistors and MOSFETs. The TO-247 variant offers better thermal performance than TO-220, making it suitable for high-current applications. Key features include a large mounting tab for heat dissipation and robust mechanical design.
