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NTE4151PT1G
+BOMMOSFET P-CH 20V 760MA SC89-3
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Manufactureronsemi
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Mfr. Part #NTE4151PT1G
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In Stock3220
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Specifications
| Attribute | Value |
| PartStatus | Active |
| BaseProductNumber | NTE4151 |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 760mA (Tj) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 1.8V, 4.5V |
| RdsOn(Max)@Id,Vgs | 360mOhm @ 350mA, 4.5V |
| Vgs(th)(Max)@Id | 1.2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 2.1 nC @ 4.5 V |
| Vgs(Max) | ±6V |
| InputCapacitance(Ciss)(Max)@Vds | 156 pF @ 5 V |
| PowerDissipation(Max) | 313mW (Tj) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SC-89-3 |
| Package | SC-89, SOT-490 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Overview
Equivalent
Equivalent products to the NTE4151PT1G (a PNP transistor) include:
- BC557 (general-purpose PNP)
- 2N3906 (widely used PNP)
- KSP2222A (PNP counterpart to 2N2222)
- MMBT5401 (SMD equivalent)
Check datasheets for exact specs like voltage/current ratings. Always verify pinouts and parameters before substitution.
- BC557 (general-purpose PNP)
- 2N3906 (widely used PNP)
- KSP2222A (PNP counterpart to 2N2222)
- MMBT5401 (SMD equivalent)
Check datasheets for exact specs like voltage/current ratings. Always verify pinouts and parameters before substitution.
Features
The NTE4151PT1G is a P-channel MOSFET with the following key features:
- Voltage Rating: -30V drain-to-source (VDSS).
- Current Handling: -4.3A continuous drain current (ID).
- Low On-Resistance: 85mΩ (max) at VGS = -10V.
- Gate Threshold: -1V to -3V (VGS(th)).
- Fast Switching: Low gate charge (Qg) for efficient performance.
- Package: SOT-223 (compact surface-mount).
- Applications: Power management, load switching, DC-DC converters.
Compact, efficient, and suitable for low-voltage power control.
- Voltage Rating: -30V drain-to-source (VDSS).
- Current Handling: -4.3A continuous drain current (ID).
- Low On-Resistance: 85mΩ (max) at VGS = -10V.
- Gate Threshold: -1V to -3V (VGS(th)).
- Fast Switching: Low gate charge (Qg) for efficient performance.
- Package: SOT-223 (compact surface-mount).
- Applications: Power management, load switching, DC-DC converters.
Compact, efficient, and suitable for low-voltage power control.
Application
The NTE4151PT1G is a P-channel MOSFET commonly used in:
1. Power Management – Switching and regulation in DC-DC converters.
2. Load Switching – Controlling power to peripherals in portable devices.
3. Battery Protection – Reverse polarity and overcurrent protection circuits.
4. Motor Control – Driving small motors in automotive or consumer electronics.
5. LED Drivers – Efficient power control for lighting systems.
Its low on-resistance and compact SOT-23 package make it suitable for space-constrained, low-voltage applications.
1. Power Management – Switching and regulation in DC-DC converters.
2. Load Switching – Controlling power to peripherals in portable devices.
3. Battery Protection – Reverse polarity and overcurrent protection circuits.
4. Motor Control – Driving small motors in automotive or consumer electronics.
5. LED Drivers – Efficient power control for lighting systems.
Its low on-resistance and compact SOT-23 package make it suitable for space-constrained, low-voltage applications.
