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NVB110N65S3F
+BOMSINGLE N-CHANNEL POWER MOSFET SU
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Manufactureronsemi
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Mfr. Part #NVB110N65S3F
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In Stock3453
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Specifications
| Attribute | Value |
| Package / Case | Bulk |
| Series | FRFET®, SuperFET® III |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain(Id) @ 25°C | 30A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 110mOhm @ 15A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 3mA |
| Gate Charge(Qg)(Max) @ Vgs | 58 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 2560 pF @ 400 V |
| Power Dissipation (Max) | 240W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK-3 (TO-263-3) |
Overview
Description
The NVB110N65S3F is a 650V, 110A N-channel power MOSFET from ON Semiconductor, designed for high-efficiency switching applications. Key features include:
- Low On-Resistance (RDS(on)): 19mΩ (typ), reducing conduction losses.
- Fast Switching: Optimized for high-frequency operation (e.g., SMPS, motor drives).
- Robust Design: Avalanche-rated for reliability in harsh conditions.
- Low Gate Charge (Qg): Enhances efficiency in high-speed switching.
Packaged in TO-263 (D2PAK), it suits industrial, automotive, and power supply systems. Its high current handling and low losses make it ideal for DC-DC converters, inverters, and motor control.
For detailed specs, refer to the datasheet.
- Low On-Resistance (RDS(on)): 19mΩ (typ), reducing conduction losses.
- Fast Switching: Optimized for high-frequency operation (e.g., SMPS, motor drives).
- Robust Design: Avalanche-rated for reliability in harsh conditions.
- Low Gate Charge (Qg): Enhances efficiency in high-speed switching.
Packaged in TO-263 (D2PAK), it suits industrial, automotive, and power supply systems. Its high current handling and low losses make it ideal for DC-DC converters, inverters, and motor control.
For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the NVB110N65S3F (650V, 110A MOSFET) include:
- Infineon IPAW65R110CFD (650V, 110A)
- STMicroelectronics STW75N65M5 (650V, 75A, similar specs)
- ON Semiconductor NVHL110N65S3FH (650V, 110A, direct alternative)
Check datasheets for exact compatibility in your application.
- Infineon IPAW65R110CFD (650V, 110A)
- STMicroelectronics STW75N65M5 (650V, 75A, similar specs)
- ON Semiconductor NVHL110N65S3FH (650V, 110A, direct alternative)
Check datasheets for exact compatibility in your application.
Features
The NVB110N65S3F is a 650V, 110A N-channel MOSFET from ON Semiconductor, designed for high-efficiency power applications. Key features include:
- Voltage Rating: 650V
- Current Rating: 110A (continuous)
- Low On-Resistance (RDS(on)): 11mΩ (max) @ VGS=10V
- Fast Switching: Optimized for high-frequency operation
- Low Gate Charge (Qg): Enhances efficiency in switching applications
- Avalanche Energy Rated: Robust against inductive load spikes
- TO-247 Package: High power dissipation capability
- Applications: SMPS, motor drives, inverters, and industrial power systems
This MOSFET combines low conduction losses with high switching performance, making it suitable for demanding power electronics.
- Voltage Rating: 650V
- Current Rating: 110A (continuous)
- Low On-Resistance (RDS(on)): 11mΩ (max) @ VGS=10V
- Fast Switching: Optimized for high-frequency operation
- Low Gate Charge (Qg): Enhances efficiency in switching applications
- Avalanche Energy Rated: Robust against inductive load spikes
- TO-247 Package: High power dissipation capability
- Applications: SMPS, motor drives, inverters, and industrial power systems
This MOSFET combines low conduction losses with high switching performance, making it suitable for demanding power electronics.
Package
The NVB110N65S3F is a power MOSFET housed in a TO-263-3 (D²PAK) package. This surface-mount package offers efficient thermal performance and is commonly used in high-power applications. It features three leads and a tab for heat dissipation.
