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P3M06120T3
+BOMSICFET N-CH 650V 29A TO-220-3
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ManufacturerPN Junction Semiconductor
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Mfr. Part #P3M06120T3
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Datasheet P3M06120T3 DataSheet
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In Stock10
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Specifications
| Attribute | Value |
| Supplier | PN Junction Semiconductor |
| Package / Case | Tube |
| Series | P3M |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain(Id) @ 25°C | 29A |
| Drive Voltage(Max Rds On Min Rds On) | 15V |
| Rds On(Max) @ Id Vgs | 158mOhm @ 10A, 15V |
| Vgs(th)(Max) @ Id | 2.2V @ 5mA (Typ) |
| Vgs(Max) | +20V, -8V |
| Power Dissipation (Max) | 153W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-2L |
