P3M12040K4

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P3M12040K4

+BOM

SICFET N-CH 1200V 63A TO-247-3

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Specifications

Attribute Value
Supplier PN Junction Semiconductor
Package / Case Tube
Series P3M
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain(Id) @ 25°C 63A
Drive Voltage(Max Rds On Min Rds On) 15V
Rds On(Max) @ Id Vgs 48mOhm @ 40A, 15V
Vgs(th)(Max) @ Id 2.2V @ 40mA (Typ)
Vgs(Max) +21V, -8V
Power Dissipation (Max) 349W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-4L

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