Images are for reference only
QJD1210010
+BOMMOSFET 2N-CH 1200V 100A SIC
-
ManufacturerPowerex Inc.
-
Mfr. Part #QJD1210010
-
Datasheet QJD1210010 DataSheet
-
Package Module
-
In Stock3390
365 Days Quality Guarantee
7*24 hours service quarantee
90-day after-sales guarantee
Genuine Product Guarantee
Specifications
| Attribute | Value |
| Supplier | Powerex Inc. |
| Package / Case | Bulk |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain(Id) @ 25°C | 100A (Tc) |
| Rds On(Max) @ Id Vgs | 25mOhm @ 100A, 20V |
| Vgs(th)(Max) @ Id | 5V @ 10mA |
| Gate Charge(Qg)(Max) @ Vgs | 500nC @ 20V |
| Input Capacitance(Ciss)(Max) @ Vds | 10200pF @ 800V |
| Power - Max | 1080W |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |