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QJD1210011
+BOMMOSFET 2N-CH 1200V 100A SIC
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ManufacturerPowerex Inc.
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Mfr. Part #QJD1210011
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Datasheet QJD1210011 DataSheet
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Package Module
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In Stock3754
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Specifications
| Attribute | Value |
| Supplier | Powerex Inc. |
| Package / Case | Bulk |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain(Id) @ 25°C | 100A (Tc) |
| Rds On(Max) @ Id Vgs | 25mOhm @ 100A, 20V |
| Vgs(th)(Max) @ Id | 5V @ 10mA |
| Gate Charge(Qg)(Max) @ Vgs | 500nC @ 20V |
| Input Capacitance(Ciss)(Max) @ Vds | 10200pF @ 800V |
| Power - Max | 900W |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |