QS8J12TCR

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QS8J12TCR

+BOM

MOSFET 2P-CH 12V 4.5A TSMT8

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Specifications

Attribute Value
Supplier Rohm Semiconductor
Package / Case Tape & Reel (TR)
Part Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain(Id) @ 25°C 4.5A
Rds On(Max) @ Id Vgs 29mOhm @ 4.5A, 4.5V
Vgs(th)(Max) @ Id 1V @ 1mA
Gate Charge(Qg)(Max) @ Vgs 40nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds 4200pF @ 6V
Power - Max 550mW
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount

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