R6009KNXC7G

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R6009KNXC7G

+BOM

600V 9A TO-220FM, HIGH-SPEED SWI

  • ManufacturerRohm Semiconductor

  • Mfr. Part #R6009KNXC7G

  • In Stock9605

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Specifications

Attribute Value
Supplier Rohm Semiconductor
Package / Case Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain(Id) @ 25°C 9A (Ta)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 535mOhm @ 2.8A, 10V
Vgs(th)(Max) @ Id 5V @ 1mA
Gate Charge(Qg)(Max) @ Vgs 16.5 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 540 pF @ 25 V
Power Dissipation (Max) 48W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220FM

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