RQ1A060ZPTR

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RQ1A060ZPTR

+BOM

MOSFET P-CH 12V 6A TSMT8

  • ManufacturerRohm Semiconductor

  • Mfr. Part #RQ1A060ZPTR

  • In Stock8035

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Specifications

Attribute Value
Supplier Rohm Semiconductor
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain(Id) @ 25°C 6A (Ta)
Drive Voltage(Max Rds On Min Rds On) 1.5V, 4.5V
Rds On(Max) @ Id Vgs 23mOhm @ 6A, 4.5V
Vgs(th)(Max) @ Id 1V @ 1mA
Gate Charge(Qg)(Max) @ Vgs 34 nC @ 4.5 V
Vgs(Max) ±10V
Input Capacitance(Ciss)(Max) @ Vds 2800 pF @ 6 V
Power Dissipation (Max) 700mW (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TSMT8

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