SCT3105KRC14

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SCT3105KRC14

+BOM

SICFET N-CH 1200V 24A TO247-4L

  • ManufacturerRohm Semiconductor

  • Mfr. Part #SCT3105KRC14

  • In Stock137

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Specifications

Attribute Value
Supplier Rohm Semiconductor
Package / Case Tube
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain(Id) @ 25°C 24A (Tc)
Drive Voltage(Max Rds On Min Rds On) 18V
Rds On(Max) @ Id Vgs 137mOhm @ 7.6A, 18V
Vgs(th)(Max) @ Id 5.6V @ 3.81mA
Gate Charge(Qg)(Max) @ Vgs 51 nC @ 18 V
Vgs(Max) +22V, -4V
Input Capacitance(Ciss)(Max) @ Vds 574 pF @ 800 V
Power Dissipation (Max) 134W
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-4L

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