SI3458BDV-T1-GE3

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SI3458BDV-T1-GE3

+BOM

MOSFET N-CH 60V 4.1A 6TSOP

  • ManufacturerVishay Siliconix

  • Mfr. Part #SI3458BDV-T1-GE3

  • In Stock32

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Specifications

Attribute Value
Series TrenchFET®
Part Status Obsolete
Base Product Number SI3458
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 30 V
Power Dissipation (Max) 2W (Ta), 3.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
Packaging Cut Tape (CT), Tape & Reel (TR)

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