SI3588DV-T1-E3

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SI3588DV-T1-E3

+BOM

MOSFET N/P-CH 20V 2.5A 6TSOP

  • ManufacturerVishay Siliconix

  • Mfr. Part #SI3588DV-T1-E3

  • Package TSOT-23-6

  • In Stock5414

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Specifications

Attribute Value
Supplier Vishay Siliconix
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
Part Status Obsolete
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain(Id) @ 25°C 2.5A, 570mA
Rds On(Max) @ Id Vgs 80mOhm @ 3A, 4.5V
Vgs(th)(Max) @ Id 450mV @ 250µA (Min)
Gate Charge(Qg)(Max) @ Vgs 7.5nC @ 4.5V
Power - Max 830mW, 83mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

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