SI7900AEDN-T1-GE3

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SI7900AEDN-T1-GE3

+BOM

MOSFET 2N-CH 20V 6A PPAK 1212-8

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Specifications

Attribute Value
Supplier Vishay Siliconix
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
Part Status Active
FET Type 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain(Id) @ 25°C 6A
Rds On(Max) @ Id Vgs 26mOhm @ 8.5A, 4.5V
Vgs(th)(Max) @ Id 900mV @ 250µA
Gate Charge(Qg)(Max) @ Vgs 16nC @ 4.5V
Power - Max 1.5W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

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