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STD35NF06LT4
+BOMMOSFET N-CH 60V 35A DPAK
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ManufacturerSTMicroelectronics
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Mfr. Part #STD35NF06LT4
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Datasheet STD35NF06LT4 DataSheet
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Package TO-252-3
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In Stock1243
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Specifications
| Attribute | Value |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | STripFET™ II |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 35A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 17mOhm @ 17.5A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 33 nC @ 4.5 V |
| Vgs(Max) | ±16V |
| Input Capacitance(Ciss)(Max) @ Vds | 1700 pF @ 25 V |
| Power Dissipation (Max) | 80W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
Overview
Description
The STD35NF06LT4 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from STMicroelectronics. It is designed for use in power management applications, such as switching power supplies, motor control, and DC-DC converters. This component features a low on-resistance, which allows for efficient current conduction with minimal power loss. The transistor can handle a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of up to 30A at 25°C. Its low gate threshold voltage also facilitates easier driving from lower voltage microcontrollers.
The STD35NF06LT4 is packaged in a TO-252 (DPAK) surface-mount package, making it suitable for applications requiring compact and efficient designs. It also includes built-in protection features like avalanche ruggedness, enhancing its reliability under high-stress conditions. The MOSFET's combination of high performance, efficiency, and reliability makes it a popular choice for various power electronic applications.
The STD35NF06LT4 is packaged in a TO-252 (DPAK) surface-mount package, making it suitable for applications requiring compact and efficient designs. It also includes built-in protection features like avalanche ruggedness, enhancing its reliability under high-stress conditions. The MOSFET's combination of high performance, efficiency, and reliability makes it a popular choice for various power electronic applications.
Equivalent
The STD35NF06LT4 is an N-channel MOSFET commonly used in power management applications. Equivalent products include:
1. IRFZ44N from International Rectifier
2. NTD5867NL from ON Semiconductor
3. FDP6030BL from Fairchild (now part of ON Semiconductor)
4. FQP30N06L from Fairchild
Ensure to compare the specific parameters like voltage, current ratings, and RDS(on) to confirm suitability for your application.
1. IRFZ44N from International Rectifier
2. NTD5867NL from ON Semiconductor
3. FDP6030BL from Fairchild (now part of ON Semiconductor)
4. FQP30N06L from Fairchild
Ensure to compare the specific parameters like voltage, current ratings, and RDS(on) to confirm suitability for your application.
Features
The STD35NF06LT4 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is commonly used for switching and amplification applications. Here are its key features:
1. Drain-Source Voltage (V_DS): It can handle a maximum voltage of 60V.
2. Continuous Drain Current (I_D): Capable of handling up to 30A at 25°C.
3. R_DS(on): It has a low on-state resistance, typically around 0.022 ohms, which enhances efficiency by reducing power loss.
4. Gate-Source Voltage (V_GS): The maximum allowable gate-source voltage is ±20V.
5. Threshold Voltage (V_GS(th)): The typical gate threshold voltage is about 2V to 4V.
6. Total Gate Charge (Q_g): Approximately 45nC, indicating how much charge is needed to turn the MOSFET on.
7. Package Type: Available in a DPAK (TO-252) package, suitable for surface-mount applications.
8. Temperature Range: Operates effectively within a junction temperature range of -55°C to 175°C.
These features make the STD35NF06LT4 suitable for high-speed switching applications, such as in power management, DC-DC converters, and motor control circuits.
1. Drain-Source Voltage (V_DS): It can handle a maximum voltage of 60V.
2. Continuous Drain Current (I_D): Capable of handling up to 30A at 25°C.
3. R_DS(on): It has a low on-state resistance, typically around 0.022 ohms, which enhances efficiency by reducing power loss.
4. Gate-Source Voltage (V_GS): The maximum allowable gate-source voltage is ±20V.
5. Threshold Voltage (V_GS(th)): The typical gate threshold voltage is about 2V to 4V.
6. Total Gate Charge (Q_g): Approximately 45nC, indicating how much charge is needed to turn the MOSFET on.
7. Package Type: Available in a DPAK (TO-252) package, suitable for surface-mount applications.
8. Temperature Range: Operates effectively within a junction temperature range of -55°C to 175°C.
These features make the STD35NF06LT4 suitable for high-speed switching applications, such as in power management, DC-DC converters, and motor control circuits.
Pinout
The STD35NF06LT4 is an N-channel MOSFET manufactured by STMicroelectronics. It typically comes in a DPAK (TO-252) package, which generally has three pins plus a tab. The pin count and basic functions are as follows:
1. Gate (G): This pin controls the MOSFET's operation. By applying a voltage to the gate, the device is turned on or off.
2. Drain (D): This is the output pin where the load is connected. The current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is usually connected to ground in most configurations. It serves as the return path for the current flowing through the drain.
4. Tab (connected to Drain): The tab is electrically connected to the drain and is used for heat dissipation when the device is mounted on a heatsink or PCB.
The STD35NF06LT4 is generally used in switching applications due to its low on-state resistance and high-speed switching capabilities.
1. Gate (G): This pin controls the MOSFET's operation. By applying a voltage to the gate, the device is turned on or off.
2. Drain (D): This is the output pin where the load is connected. The current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is usually connected to ground in most configurations. It serves as the return path for the current flowing through the drain.
4. Tab (connected to Drain): The tab is electrically connected to the drain and is used for heat dissipation when the device is mounted on a heatsink or PCB.
The STD35NF06LT4 is generally used in switching applications due to its low on-state resistance and high-speed switching capabilities.
Manufacturer
The STD35NF06LT4 is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products. The company is known for producing components used in various electronic applications, including microcontrollers, sensors, power management devices, and more. Headquartered in Geneva, Switzerland, STMicroelectronics serves various industries such as automotive, industrial, personal electronics, and communications equipment.
Application
The STD35NF06LT4 is an N-channel MOSFET commonly used in various applications due to its efficiency and reliability. Typical application areas include:
1. Switching Power Supplies: Used for efficient power management in converters and inverters.
2. Motor Control: Ideal for driving motors in automotive and industrial applications.
3. Load Switching: Suitable for controlling different loads in electronic devices.
4. Battery Management: Used in battery-powered devices for efficient energy utilization.
5. Lighting Systems: Utilized in LED drivers due to its fast switching capabilities.
6. Telecommunications: Employed in circuits requiring high-speed switching.
These applications leverage the MOSFET's low on-resistance and fast switching speed.
1. Switching Power Supplies: Used for efficient power management in converters and inverters.
2. Motor Control: Ideal for driving motors in automotive and industrial applications.
3. Load Switching: Suitable for controlling different loads in electronic devices.
4. Battery Management: Used in battery-powered devices for efficient energy utilization.
5. Lighting Systems: Utilized in LED drivers due to its fast switching capabilities.
6. Telecommunications: Employed in circuits requiring high-speed switching.
These applications leverage the MOSFET's low on-resistance and fast switching speed.
Package
The STD35NF06LT4 is a N-channel MOSFET from STMicroelectronics. It is typically provided in a DPAK (TO-252) package, which is a surface-mount package type known for its compact profile and effective heat dissipation, making it suitable for applications requiring efficient power management.
