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STL210N4F7AG
+BOMMOSFET N-CH 40V 120A POWERFLAT
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ManufacturerSTMicroelectronics
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Mfr. Part #STL210N4F7AG
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Datasheet STL210N4F7AG DataSheet
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Package PowerFLAT 5x6 WF
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In Stock4794
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Specifications
| Attribute | Value |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, STripFET™ F7 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 120A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 1.6mOhm @ 16A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 43 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 3600 pF @ 25 V |
| Power Dissipation (Max) | 150W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerFlat™ (5x6) |
Overview
Description
The "STL" prefix generally indicates the manufacturer, STMicroelectronics, a leading company in the semiconductor industry. The numbers and letters that follow often provide information about the product family, specific features, or design revisions. For accurate specifications, one would need to refer to the datasheet provided by the manufacturer, which includes details such as electrical characteristics, mechanical dimensions, and application guidelines. These components are widely used in various industries, including automotive, industrial, and consumer electronics, contributing to improved performance and reliability of electronic systems.
Equivalent
1. IRF540N from Infineon Technologies.
2. FQP30N06L from ON Semiconductor.
3. NXP's PSMN3R0-40YS.
4. Vishay's SiHP054N60E-GE3.
Ensure compatibility with your specific application requirements, such as voltage, current, and switching speed, before substituting.
Features
1. N-Channel MOSFET: It is an N-channel enhancement type MOSFET.
2. Voltage and Current Ratings: The device typically supports a drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) of up to 210A.
3. Low On-Resistance: It has a low R_DS(on), which helps in minimizing conduction losses and improves efficiency.
4. Fast Switching: The MOSFET is designed for fast switching speeds, which is crucial for high-frequency applications.
5. Thermal Performance: It comes with excellent thermal characteristics, often enhanced by advanced packaging technologies.
6. Applications: Suitable for applications like DC-DC converters, motor drives, and power management systems.
7. Package Type: Often available in a power-efficient package that supports enhanced thermal dissipation.
This MOSFET is ideal for high-power applications where efficiency and performance are critical. Always refer to the manufacturer's datasheet for precise specifications and usage guidelines.