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STL24N60M2
+BOMMOSFET N-CH 600V 18A PWRFLAT HV
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ManufacturerSTMicroelectronics
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Mfr. Part #STL24N60M2
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In Stock2351
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Specifications
| Attribute | Value |
| Supplier | STMicroelectronics |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | MDmesh™ II Plus |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain(Id) @ 25°C | 18A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 210mOhm @ 9A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 29 nC @ 10 V |
| Vgs(Max) | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 1060 pF @ 100 V |
| Power Dissipation (Max) | 125W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerFlat™ (8x8) HV |
Overview
Description
STL24N60M2 is STMicroelectronics’ 600 V N-channel power MOSFET designed for high‑voltage switch‑mode power conversion. It targets offline power supplies, PFC stages, motor drives, and inverters, offering a continuous drain current around 24 A with a suitable Rds(on) for switching applications. It is not a logic‑level device; a gate drive of about +10 V is typically required to fully turn it on. The part features rugged avalanche energy performance and is available in common power‑MOSFET packages (eg, D²PAK/DPAK for surface mount, TO‑220 for through‑hole). Design notes: proper heatsinking, appropriate gate drive with protection, and snubber or Zener clamp networks to limit Vgs and dv/dt are important. Always consult the latest datasheet for exact figures (Rds(on), Vgs(th), gate charge, avalanche rating, packaging) and to choose the correct variant for your topology.
Features
STL24N60M2 is a 600 V N-channel power MOSFET. Key features:
- Blocking voltage: 600 V
- Continuous drain current: around 24 A
- Low conduction loss: Rds(on) typically about 0.9–1.2 Ω (at Vgs ≈ 10 V)
- Fast switching suitable for SMPS, inverters, motor drives
- Avalanche rugged with defined EAS energy rating
- Robust body diode and dv/dt capability
- Available in common power-package options (D²PAK/DPAK and similar; through-hole variants may exist)
- RoHS compliant and suitable for industrial/automotive use
For exact numbers (Rds(on), gate charge, EAS, packaging), please refer to the current ST datasheet.
- Blocking voltage: 600 V
- Continuous drain current: around 24 A
- Low conduction loss: Rds(on) typically about 0.9–1.2 Ω (at Vgs ≈ 10 V)
- Fast switching suitable for SMPS, inverters, motor drives
- Avalanche rugged with defined EAS energy rating
- Robust body diode and dv/dt capability
- Available in common power-package options (D²PAK/DPAK and similar; through-hole variants may exist)
- RoHS compliant and suitable for industrial/automotive use
For exact numbers (Rds(on), gate charge, EAS, packaging), please refer to the current ST datasheet.
Pinout
STL24N60M2 is a 600 V N-channel enhancement-mode power MOSFET.
- Pin count: 3 pins (Gate, Drain, Source). The Drain is also the metal tab, so the package has 4 electrical connections (3 pins + tab).
- Pinout (typical): Pin 1 = Gate (G), Pin 2 = Drain (D), Pin 3 = Source (S). The drain tab is connected to Drain.
- Function: Used as a high-voltage switch/drive element; Gate controls conduction between Drain and Source.
- Pin count: 3 pins (Gate, Drain, Source). The Drain is also the metal tab, so the package has 4 electrical connections (3 pins + tab).
- Pinout (typical): Pin 1 = Gate (G), Pin 2 = Drain (D), Pin 3 = Source (S). The drain tab is connected to Drain.
- Function: Used as a high-voltage switch/drive element; Gate controls conduction between Drain and Source.
Manufacturer
- Manufacturer: STMicroelectronics (ST)
- What kind of company: A global, multinational semiconductor company headquartered in Europe that designs and manufactures a wide range of semiconductor devices and electronics components (e.g., power semiconductors, sensors, MCUs) for automotive, industrial, consumer, and other markets.
- What kind of company: A global, multinational semiconductor company headquartered in Europe that designs and manufactures a wide range of semiconductor devices and electronics components (e.g., power semiconductors, sensors, MCUs) for automotive, industrial, consumer, and other markets.
Application
STL24N60M2 is a high-voltage N-channel MOSFET (600 V) suitable for switching applications. Common uses include:
- Offline switch-mode power supplies (SMPS) and PFC stages
- High-voltage DC-DC converters
- Solar/grid-tied inverters and PV power systems
- Motor drives and PWM inverters for AC/BLDC motors
- UPS and energy-storage DC/AC conversion
- Power supplies for consumer electronics
- Industrial and automotive power-electronics equipment
- Offline switch-mode power supplies (SMPS) and PFC stages
- High-voltage DC-DC converters
- Solar/grid-tied inverters and PV power systems
- Motor drives and PWM inverters for AC/BLDC motors
- UPS and energy-storage DC/AC conversion
- Power supplies for consumer electronics
- Industrial and automotive power-electronics equipment
Package
Typical package: TO-220AB (through-hole). A surface-mount D²PAK (TO-263) version is also available.
