STL90N10F7

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STL90N10F7

+BOM

MOSFET N-CH 100V 70A POWERFLAT

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Specifications

Attribute Value
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series DeepGATE™, STripFET™ VII
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 70A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 10.5mOhm @ 8A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 39 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 3550 pF @ 50 V
Power Dissipation (Max) 5W (Ta), 100W (Tc)
Operating Temperature 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerFlat™ (5x6)

Overview

Description

The STL90N10F7 is an N-channel MOSFET produced by STMicroelectronics, designed for high-efficiency power applications. It features a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 90A, making it suitable for heavy-load applications. The MOSFET is built using ST's advanced STripFET F7 technology, which offers low on-resistance (R_DS(on)), resulting in reduced conduction losses and improved efficiency.
This MOSFET is particularly advantageous in applications like power supplies, motor control, and DC-DC converters, where both performance and reliability are essential. It comes in a PowerFLAT 8x8 package, providing an optimal balance between performance, thermal management, and compact size, which is beneficial for space-constrained designs.
Key features include fast switching speeds, high avalanche ruggedness, and low gate charge, which further enhance its efficiency in high-frequency operations. Overall, the STL90N10F7 is an excellent choice for designers looking to optimize power efficiency in demanding applications.

Equivalent

The STL90N10F7 is a N-channel MOSFET often used in power management applications. Equivalent products would include components with similar voltage, current ratings, and RDS(on) specifications. Examples include:
1. IRF540N from Infineon.
2. NTD5867NL from ON Semiconductor.
3. FDP047N10 from Fairchild Semiconductor.
Make sure to verify the specifications and pin configurations to ensure compatibility with your specific application needs.

Features

The STL90N10F7 is a power MOSFET designed by STMicroelectronics. Key features of this component include:
1. N-channel MOSFET: It is designed for efficient switching and amplification applications.
2. Voltage Rating: It has a drain-source voltage (V_DS) rating of 100V.
3. Current Capacity: The continuous drain current (I_D) can reach up to 80A.
4. Low On-Resistance: Features a low R_DS(on), which reduces power loss and enhances efficiency.
5. Fast Switching Speed: Offers rapid switching capabilities, making it suitable for high-frequency applications.
6. Enhanced Ruggedness: Built to withstand high-energy conditions, providing reliability in various operating environments.
7. Package Type: Comes in a PowerFLAT™ 5x6 package, offering compact size and efficient thermal management.
8. Applications: Ideal for use in power management, DC-DC converters, and automotive applications.
These features make the STL90N10F7 a versatile component for electronic designs requiring efficient power handling and space-saving attributes.

Pinout

The STL90N10F7 is a power MOSFET from STMicroelectronics. It typically comes in a PowerFLAT 5x6 package. This MOSFET is designed for use in applications requiring low on-resistance and compact size.
The PowerFLAT 5x6 package generally features a pin count of about 8 pins. Here’s a brief overview of the pin functions for the STL90N10F7:
1. Gate (G): Controls the MOSFET's conduction state. By applying voltage to this pin, you can turn the MOSFET on or off.
2. Source (S): This is where the current flows out of the MOSFET when it is on.
3. Drain (D): Current flows into the MOSFET through this pin when it is in the on state.
The PowerFLAT 5x6 package also includes a thermal pad, which helps dissipate heat from the device, enhancing performance and reliability.
For detailed pin assignments and electrical characteristics, always refer to the specific datasheet provided by the manufacturer.

Manufacturer

The STL90N10F7 is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, manufactures, and markets a wide range of semiconductor products and solutions. It is one of the leading semiconductor companies in the world, known for its innovation and technology expertise.
The company serves various segments of the electronics industry, including automotive, industrial, personal electronics, communications equipment, and computers. STMicroelectronics develops products that help its customers address societal challenges such as energy efficiency, security, and digitalization.
STMicroelectronics is headquartered in Geneva, Switzerland, and operates globally with manufacturing sites, R&D facilities, and sales offices in multiple countries. The company is known for its diverse product portfolio, which includes microcontrollers, sensors, power devices, analog devices, and other semiconductor components.

Application

The STL90N10F7 is a power MOSFET used primarily in applications requiring efficient power management and high-speed switching. Its key areas of application include:
1. Power Supplies: Used in DC-DC converters and AC-DC power supplies for efficient power conversion.
2. Motor Drives: Suitable for controlling motors in industrial and automotive applications.
3. Lighting: Employed in LED drivers and lighting systems for energy-efficient lighting solutions.
4. Battery Management: Utilized in battery charging and discharging circuits.
5. Inverters: Used in inverter circuits for solar power systems and uninterruptible power supplies (UPS).
Its low on-resistance and fast switching capabilities make it ideal for applications requiring high efficiency and minimal power loss.

Package

The STL90N10F7 is a power MOSFET with a DPAK (TO-252) package type. This package is designed for surface mounting on circuit boards and is commonly used for applications requiring efficient thermal management and compactness.

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