STP10N60M2

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STP10N60M2

+BOM

MOSFET N-CH 600V 7.5A TO220

  • ManufacturerSTMicroelectronics

  • Mfr. Part #STP10N60M2

  • In Stock9121

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Specifications

Attribute Value
Supplier STMicroelectronics
Package / Case Tube
Series MDmesh™ II Plus
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain(Id) @ 25°C 7.5A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 600mOhm @ 3A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 13.5 nC @ 10 V
Vgs(Max) ±25V
Input Capacitance(Ciss)(Max) @ Vds 400 pF @ 100 V
Power Dissipation (Max) 85W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220

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