STP3N150

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STP3N150

+BOM

MOSFET N-CH 1500V 2.5A TO220AB

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Specifications

Attribute Value
Package Tube
Series PowerMESH™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 1500 V
Current-ContinuousDrain(Id)@25°C 2.5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 9Ohm @ 1.3A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 29.3 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 939 pF @ 25 V
PowerDissipation(Max) 140W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220

Overview

Description

The STP3N150 is an N-channel power MOSFET designed for high-voltage applications. Key features include:
- Voltage Rating: 1500V (VDSS)
- Current Rating: 3A (ID)
- Low On-Resistance (RDS(on)): Reduces conduction losses
- Fast Switching: Suitable for high-frequency circuits
- Applications: Used in power supplies, inverters, and industrial systems requiring high-voltage switching.
It comes in a TO-220 package for efficient heat dissipation. The STP3N150 is ideal for designs needing robust performance at high voltages with moderate current handling.

Equivalent

Equivalent products to the STP3N150 (150V, 3A N-channel MOSFET) include:
- IRF740 (400V, 10A, similar but higher voltage/current)
- STP3NK150Z (150V, 3A, same series)
- IRF540 (100V, 33A, higher current)
- FQP3N150 (150V, 3A, Fairchild equivalent)
Check datasheets for exact specs.

Features

The STP3N150 is a N-channel MOSFET with the following key features:
- Voltage Rating: 1500V (high-voltage capability)
- Current Rating: 3A (continuous drain current)
- Low On-Resistance (RDS(on)): Typically 6Ω (reduces power loss)
- Fast Switching: Suitable for high-frequency applications
- Avalanche Energy Rated: Enhances reliability in harsh conditions
- TO-220 Package: Easy mounting and heat dissipation
Ideal for switching power supplies, inverters, and high-voltage circuits.

Pinout

The STP3N150 is a N-channel MOSFET with 3 pins and the following functions:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Connects to ground (low-voltage side).
Key specifications:
- 1500V drain-source voltage (VDSS)
- 3A continuous drain current (ID)
- Low gate charge for efficient switching
Commonly used in high-voltage power supplies, inverters, and industrial applications.

Manufacturer

The STP3N150 is a power MOSFET manufactured by STMicroelectronics, a multinational semiconductor company based in Switzerland. STMicroelectronics specializes in designing and producing a wide range of semiconductor solutions, including microcontrollers, sensors, power devices, and analog ICs, serving industries like automotive, industrial, and consumer electronics. The company is known for its innovation and high-quality electronic components.
The STP3N150 is a 150V N-channel MOSFET, commonly used in power management applications.

Package

The STP3N150 is a N-channel MOSFET typically available in a TO-220 package. This through-hole package is common for power transistors, offering good thermal performance and ease of mounting on heatsinks. Key specs include 150V drain-source voltage and 3A current rating. Check datasheets for exact variants, as manufacturers may offer alternative packages like TO-220FP or D²PAK.

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