STW70N65M2

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STW70N65M2

+BOM

MOSFET N-CH 650V 63A TO247-3

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Specifications

Attribute Value
Supplier STMicroelectronics
Package / Case Tube
Series MDmesh™ M2
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain(Id) @ 25°C 63A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 46mOhm @ 31.5A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 117 nC @ 10 V
Vgs(Max) ±25V
Input Capacitance(Ciss)(Max) @ Vds 5140 pF @ 100 V
Power Dissipation (Max) 446W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3

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