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TP65H035WS
+BOMGANFET N-CH 650V 46.5A TO247-3
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ManufacturerTransphorm
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Mfr. Part #TP65H035WS
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In Stock59
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Specifications
| Attribute | Value |
| Supplier | Transphorm |
| Package | Tube |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 46.5A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 12V |
| RdsOn(Max)@IdVgs | 41mOhm @ 30A, 10V |
| Vgs(th)(Max)@Id | 4.8V @ 1mA |
| GateCharge(Qg)(Max)@Vgs | 36 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1500 pF @ 400 V |
| PowerDissipation(Max) | 156W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |