TPH3206LDG-TR

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TPH3206LDG-TR

+BOM

GANFET N-CH 600V 17A 3PQFN

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Specifications

Attribute Value
Supplier Transphorm
Package / Case Tray
Part Status Obsolete
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain(Id) @ 25°C 17A (Tc)
Drive Voltage(Max Rds On Min Rds On) 8V
Rds On(Max) @ Id Vgs 180mOhm @ 11A, 8V
Vgs(th)(Max) @ Id 2.6V @ 500µA
Gate Charge(Qg)(Max) @ Vgs 9.3 nC @ 4.5 V
Vgs(Max) ±18V
Input Capacitance(Ciss)(Max) @ Vds 760 pF @ 480 V
Power Dissipation (Max) 96W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 3-PQFN (8x8)

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