TP65H050WSQA

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TP65H050WSQA

+BOM

GANFET N-CH 650V 36A TO247-3

  • ManufacturerTransphorm

  • Mfr. Part #TP65H050WSQA

  • In Stock213

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Specifications

Attribute Value
Supplier Transphorm
Package Tube
Series Automotive, AEC-Q101
ProductStatus Active
FETType N-Channel
Technology GaNFET (Cascode Gallium Nitride FET)
DraintoSourceVoltage(Vdss) 650 V
Current-ContinuousDrain(Id)@25°C 36A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 60mOhm @ 25A, 10V
Vgs(th)(Max)@Id 4.8V @ 700µA
GateCharge(Qg)(Max)@Vgs 24 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1000 pF @ 400 V
PowerDissipation(Max) 150W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-3

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