TP65H050WSQA

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TP65H050WSQA

+BOM

GANFET N-CH 650V 36A TO247-3

  • ManufacturerTransphorm

  • Mfr. Part #TP65H050WSQA

  • In Stock213

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Specifications

Attribute Value
Supplier Transphorm
Package / Case Tube
Series Automotive, AEC-Q101
Part Status Active
FET Type N-Channel
Technology GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain(Id) @ 25°C 36A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 60mOhm @ 25A, 10V
Vgs(th)(Max) @ Id 4.8V @ 700µA
Gate Charge(Qg)(Max) @ Vgs 24 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 1000 pF @ 400 V
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3

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