TP65H070LSG

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TP65H070LSG

+BOM

GANFET N-CH 650V 25A 3PQFN

  • ManufacturerTransphorm

  • Mfr. Part #TP65H070LSG

  • In Stock8760

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Specifications

Attribute Value
Supplier Transphorm
Package / Case Tube
Series TP65H070L
Part Status Discontinued at Digi-Key
FET Type N-Channel
Technology GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain(Id) @ 25°C 25A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 85mOhm @ 16A, 10V
Vgs(th)(Max) @ Id 4.8V @ 700µA
Gate Charge(Qg)(Max) @ Vgs 9.3 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 600 pF @ 400 V
Power Dissipation (Max) 96W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 3-PQFN (8x8)

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