TP65H070LSG

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TP65H070LSG

+BOM

GANFET N-CH 650V 25A 3PQFN

  • ManufacturerTransphorm

  • Mfr. Part #TP65H070LSG

  • In Stock8760

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Specifications

Attribute Value
Supplier Transphorm
Package Tube
Series TP65H070L
ProductStatus Discontinued at Digi-Key
FETType N-Channel
Technology GaNFET (Cascode Gallium Nitride FET)
DraintoSourceVoltage(Vdss) 650 V
Current-ContinuousDrain(Id)@25°C 25A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 85mOhm @ 16A, 10V
Vgs(th)(Max)@Id 4.8V @ 700µA
GateCharge(Qg)(Max)@Vgs 9.3 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 600 pF @ 400 V
PowerDissipation(Max) 96W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 3-PQFN (8x8)

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