UPC8181TB-E3-A

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UPC8181TB-E3-A

+BOM

RF/MICROWAVE AMPLIFIER, BIPOLAR

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Specifications

Attribute Value
Supplier Rochester Electronics, LLC
Package Bulk
ProductStatus Obsolete
Frequency 0Hz ~ 4GHz
P1dB 4.5dBm ~ 7dBm
Gain 18dB ~ 24dB
NoiseFigure 4.5dB ~ 6dB
RFType General Purpose
Voltage-Supply 2.7V ~ 3.3V
Current-Supply 23mA ~ 30mA
TestFrequency 1.9GHz
MountingType Surface Mount
Package/Case 6-TSSOP, SC-88, SOT-363

Overview

Description

The UPC8181TB-E3-A is a high-frequency, low-noise amplifier, primarily used in RF applications such as cellular, PCS, and wireless communication systems. Manufactured by Renesas Electronics, this device is designed to amplify weak RF signals while minimizing noise, making it ideal for enhancing signal quality in communication devices.
Key features include:
1. Low Noise Figure: Ensures minimal signal distortion, enhancing overall system performance.
2. High Gain: Amplifies signals effectively, which is crucial in weak signal environments.
3. Wide Frequency Range: Supports a broad frequency spectrum, making it versatile for various applications.
4. Compact Package: Housed in a small, surface-mount package, it is suitable for compact and portable devices.
The UPC8181TB-E3-A is especially valued in applications where space is limited and performance is critical, providing an efficient balance between size, noise reduction, and amplification. Its reliability and efficiency make it a preferred choice in the design of modern RF front-end systems.

Equivalent

The UPC8181TB-E3-A is a wideband amplifier IC commonly used in RF applications. Some equivalent or similar products include:
1. RFMD/RF Micro Devices RF3863: An MMIC amplifier for similar RF applications.
2. Mini-Circuits ERA-3+ or ERA-2SM+: Similar wideband amplifier modules.
3. Analog Devices AD8350: A broadband amplifier with similar features.
4. Qorvo TQP3M9009: A low-noise amplifier suitable for similar applications.
These equivalents may vary in specifications, so it’s important to verify compatibility with your specific requirements.

Features

The UPC8181TB-E3-A is a silicon monolithic integrated circuit designed primarily for RF front-end applications. Key features include:
1. Low Noise Figure: This component offers a low noise figure, making it suitable for improving signal reception sensitivity in RF applications.
2. High Gain: It provides high gain, enhancing signal strength for better performance in RF systems.
3. Wide Frequency Range: The device operates over a wide frequency range, accommodating various RF applications.
4. Low Supply Voltage: Designed to operate at low supply voltages, it supports power-efficient applications.
5. Compact Package: Available in a small, surface-mount package, the UPC8181TB-E3-A is suitable for compact and space-constrained designs.
6. Stability: The IC is designed for stability across its operational range, ensuring reliable performance.
These features make the UPC8181TB-E3-A a versatile choice for RF front-end circuits in communication devices, including mobile phones and wireless systems, where high performance and efficiency are required.

Pinout

The UPC8181TB-E3-A is a silicon monolithic integrated circuit designed as a wide-band amplifier. It typically comes in a 6-pin super-mini mold package. Here's a brief overview of its pin functions:
1. Pin 1 (VCC): Power supply pin. It provides the necessary voltage for the operation of the amplifier.
2. Pin 2 (RF IN): Radio frequency input. This pin receives the RF signal that needs amplification.
3. Pin 3 (GND): Ground pin. It serves as the common return path for electric current.
4. Pin 4 (RF OUT/BIAS): RF output and bias pin. This pin outputs the amplified RF signal and also sets the bias for the amplifier.
5. Pin 5 (Emitter): Emitter pin of the internal transistor, typically connected to ground through a resistor for biasing.
6. Pin 6 (NC/No Connection): This pin is often not internally connected.
The UPC8181TB-E3-A is utilized in applications where small size and high performance are required, such as mobile communications, satellite systems, and other RF applications.

Manufacturer

The UPC8181TB-E3-A is a part manufactured by Renesas Electronics Corporation. Renesas is a Japanese semiconductor company that specializes in the design, development, manufacturing, and sale of a wide range of semiconductor solutions. These include microcontrollers, analog and power devices, and SoC products used across various industries such as automotive, industrial, home electronics, and information communication technology. Renesas is known for providing integrated solutions that cater to the needs of the rapidly evolving electronics market.

Application

The UPC8181TB-E3-A is a wide-band amplifier IC commonly used in high-frequency applications. Its primary applications include RF amplification in wireless communication systems, such as mobile phones and base stations, due to its wide frequency range and high gain. It's also used in satellite communication systems, GPS receivers, and other RF signal chains where low noise and wide bandwidth are crucial. Additionally, it can be utilized in instrumentation and test equipment for RF signal processing and amplification tasks.

Package

The UPC8181TB-E3-A is a high-frequency NPN silicon transistor designed for RF amplifier applications. It is housed in a SOT-363 package, which is a compact, surface-mount package suitable for high-density circuit boards.

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