2N7002E vs 2N7002,215

This in-depth comparison of the 2N7002E and 2N7002,215 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002E is a viable functional replacement candidate for the 2N7002,215 in most low-power switching applications, provided that the slightly higher on-resistance and tighter package tolerance are acceptable for the target design. Designers should validate thermal performance and gate drive conditions before committing to a drop-in substitution.

Drain-Source Voltage Rating High match
Continuous Drain Current Validation required
On-Resistance Validation required
Package Type High match

Review the critical differences →

Parts at a glance

Part A

2N7002E

Panasonic Electronic Components

Lifecycle
Active
Stock
3552 PCS
Package
SOT-23-3
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ
Part B

2N7002,215

Nexperia USA Inc.

Lifecycle
Active
Stock
6582 PCS
Package
SOT-23-3
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

RFQ Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002E 2N7002,215
Part Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 300mA (Ta) 300mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V 10V
Rds On(Max) @ Id Vgs 3Ohm @ 100mA, 10V 5Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 3V @ 250µA 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 0.8 nC @ 4.5 V -
Vgs(Max) ±20V ±30V
Input Capacitance(Ciss)(Max) @ Vds 40 pF @ 10 V 50 pF @ 10 V
Power Dissipation (Max) 350mW (Ta) 830mW (Ta)
Operating Temperature 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Series - TrenchMOS™
Compare RFQ