2N7002 vs 2N7002K-T1-GE3 Comparison

This in-depth comparison of the 2N7002K-T1-GE3 and 2N7002 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
2N7002K-T1-GE3

+BOM

4371 PCS | Vishay Siliconix
2N7002

+BOM

1470 PCS | STMicroelectronics
Package SOT-23-3 SOT-23
Description MOSFET N-CH 60V 300MA TO236 MOSFET N-CH 60V 200MA SOT23-3
Series TrenchFET® STripFET™
Part Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 300mA (Ta) 200mA (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On(Max) @ Id Vgs 2Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA 3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 0.6 nC @ 4.5 V 2 nC @ 5 V
Vgs(Max) ±20V ±18V
Input Capacitance(Ciss)(Max) @ Vds 30 pF @ 25 V 43 pF @ 25 V
Power Dissipation (Max) 350mW (Ta) 350mW (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Comparison Model : 2N7002K-T1-GE3 2N7002

+BOM RFQ