2N7002A-7 vs 2N7002E-T1-E3

This in-depth comparison of the 2N7002A-7 and 2N7002E-T1-E3 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

2N7002A-7

Diodes Incorporated

Lifecycle: Active
Stock: 1569 PCS
Package: SOT-23-3
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Part B

2N7002E-T1-E3

Vishay Siliconix

Lifecycle: Active
Stock: 7566 PCS
Package: SOT-23-3
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	2N7002A-7	2N7002E-T1-E3
Part Status	Active	Active
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	60 V
Current - Continuous Drain(Id) @ 25°C	180mA (Ta)	240mA (Ta)
Drive Voltage(Max Rds On Min Rds On)	5V, 10V	4.5V, 10V
Rds On(Max) @ Id Vgs	6Ohm @ 115mA, 5V	3Ohm @ 250mA, 10V
Vgs(th)(Max) @ Id	2V @ 250µA	2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	-	0.6 nC @ 4.5 V
Vgs(Max)	±20V	±20V
Input Capacitance(Ciss)(Max) @ Vds	23 pF @ 25 V	21 pF @ 5 V
Power Dissipation (Max)	370mW (Ta)	350mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

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