Part A
2N7002NXAKR
Nexperia USA Inc.
- Lifecycle
- Active
- Stock
- 2910 PCS
- Package
- SOT-23-3
- Series
- Transistors - FETs, MOSFETs - Single
Replacement verdict
Compatible functional replacement candidate
The 2N7002A-7 and 2N7002NXAKR are both 60 V, 300 mA N-channel enhancement-mode MOSFETs in SOT-23 packages, making the 2N7002NXAKR a viable functional replacement candidate for the 2N7002A-7 in most low-power switching and level-shifting applications. Designers should verify gate threshold voltage, on-resistance, and thermal characteristics against the target circuit requirements before committing to a drop-in substitution.
Drain-Source Voltage Rating
High match
Continuous Drain Current
High match
Package Type
High match
On-Resistance
Validation required
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 2N7002A-7 | 2N7002NXAKR | Why it matters |
|---|---|---|---|
| Drain-Source Voltage (Vdss) | 60 V | 60 V | Sets the maximum voltage the MOSFET can block in the off state; must meet or exceed the circuit rail voltage. |
| Continuous Drain Current (Id) | 115 mA | 300 mA | Determines the maximum load current the device can carry continuously; higher rating allows driving heavier loads. |
| Drain-Source On-Resistance (Rds(on)) | 7.5 Ω @ 10 V, 500 mA | 1.6 Ω @ 10 V, 500 mA | Lower on-resistance reduces conduction losses and voltage drop, improving efficiency in switching and load-driving applications. |
| Gate Threshold Voltage (Vgs(th)) | 2.1 V max | 2.1 V max | Defines the gate voltage needed to start conduction; affects compatibility with low-voltage logic drive levels. |
| Gate-Source Voltage (Vgs) Max | ±20 V | ±20 V | Specifies the maximum safe gate drive voltage; exceeding it can damage the gate oxide. |
| Power Dissipation (Pd) | 200 mW | 420 mW | Indicates how much power the package can dissipate; higher rating supports more demanding thermal conditions. |
| Input Capacitance (Ciss) | 50 pF | 30 pF | Lower input capacitance enables faster switching and reduces gate drive power requirements. |
| Package / Mounting | SOT-23 Surface Mount | SOT-23 Surface Mount | Package and mounting type must match the PCB footprint for direct physical substitutability. |
| Operating Junction Temperature | -55 °C to +150 °C | -55 °C to +150 °C | Defines the thermal operating window; must cover the application's ambient and self-heating conditions. |
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002NXAKR | 2N7002A-7 |
|---|---|---|
| Part Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 190mA (Ta), 300mA (Tc) | 180mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 5V, 10V | 5V, 10V |
| Rds On(Max) @ Id Vgs | 4.5Ohm @ 100mA, 10V | 6Ohm @ 115mA, 5V |
| Vgs(th)(Max) @ Id | 2.1V @ 250µA | 2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 0.43 nC @ 4.5 V | - |
| Vgs(Max) | ±20V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 20 pF @ 10 V | 23 pF @ 25 V |
| Power Dissipation (Max) | 265mW (Ta), 1.33W (Tc) | 370mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
Frequently asked questions
What are the main differences between the 2N7002A-7 and the 2N7002NXAKR?
The 2N7002A-7 is a 60 V N-channel enhancement mode MOSFET in a SOT-23 package from Diodes Incorporated, while the 2N7002NXAKR is a 60 V N-channel enhancement mode MOSFET in a SOT-23 package from Nexperia. Both share the same basic 2N7002 family characteristics, but they differ in manufacturer, gate threshold voltage range, on-resistance specifications, and qualification details.
Are the 2N7002A-7 and 2N7002NXAKR pin-compatible?
Yes. Both devices use the standard SOT-23 (TO-236AB) package with the same pinout: pin 1 is the gate, pin 2 is the source, and pin 3 is the drain. This allows them to share the same PCB footprint.
What is the drain-source voltage rating for both devices?
Both the 2N7002A-7 and the 2N7002NXAKR have a maximum drain-source voltage (VDS) rating of 60 V.
How do the continuous drain current ratings compare?
The 2N7002A-7 is rated for a continuous drain current (ID) of 115 mA at 25 °C. The 2N7002NXAKR is rated for a continuous drain current of 300 mA at 25 °C, giving it a higher current handling capability.
What are the gate threshold voltage ranges for these MOSFETs?
The 2N7002A-7 has a gate threshold voltage (VGS(th)) range of 1.0 V to 2.5 V at VDS = VGS and ID = 250 µA. The 2N7002NXAKR has a gate threshold voltage range of 1.1 V to 2.1 V at the same test conditions.
How does the on-resistance (RDS(on)) compare between the two parts?
The 2N7002A-7 specifies a maximum RDS(on) of 7.5 Ω at VGS = 10 V and ID = 50 mA, and 13.5 Ω at VGS = 4.5 V and ID = 50 mA. The 2N7002NXAKR specifies a maximum RDS(on) of 5 Ω at VGS = 10 V and ID = 300 mA, and 9 Ω at VGS = 4.5 V and ID = 200 mA, indicating lower conduction losses for the Nexperia part under the specified conditions.
Can the 2N7002A-7 and 2N7002NXAKR be used interchangeably in a design?
They are not identical in electrical performance. The 2N7002NXAKR offers higher current capability and lower RDS(on), while the 2N7002A-7 has a wider gate threshold voltage range. Interchangeability depends on the specific circuit requirements, including drive voltage, load current, and switching speed. Designers should verify that the replacement meets the application's worst-case conditions using the respective manufacturer datasheets.
What are the operating junction temperature ranges for these devices?
Both the 2N7002A-7 and the 2N7002NXAKR have a maximum operating junction temperature (Tj) of 150 °C. The minimum storage and operating temperature for both is typically −55 °C.