2N7002DW vs 2N7002KT1G Comparison

This in-depth comparison of the 2N7002KT1G and 2N7002DW provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
2N7002KT1G

+BOM

2832 PCS | onsemi
2N7002DW

+BOM

6631 PCS | onsemi
Package SOT-23-3
Description MOSFET N-CH 60V 320MA SOT23-3 MOSFET 2N-CH 60V 0.115A SC88
Part Status Active Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60V
Current - Continuous Drain(Id) @ 25°C 320mA (Ta) -
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V -
Rds On(Max) @ Id Vgs 1.6Ohm @ 500mA, 10V -
Vgs(th)(Max) @ Id 2.5V @ 250µA -
Gate Charge(Qg)(Max) @ Vgs 0.7 nC @ 4.5 V -
Vgs(Max) ±20V -
Input Capacitance(Ciss)(Max) @ Vds 24.5 pF @ 20 V -
Power Dissipation (Max) 350mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number - 2N7002
Configuration - 2 N-Channel (Dual)
FET Feature - Logic Level Gate
Current - Continuous Drain (Id) @ 25°C - 115mA
Rds On (Max) @ Id, Vgs - 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id - 2V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds - 50pF @ 25V
Power - Max - 200mW
Packaging - Cut Tape (CT), Tape & Reel (TR)
Comparison Model : 2N7002KT1G 2N7002DW

+BOM RFQ