2N7002E-T1-E3 vs 2N7002V

This in-depth comparison of the 2N7002E-T1-E3 and 2N7002V provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002E-T1-E3 and 2N7002V are both N-channel enhancement-mode MOSFETs in SOT-23 packages with matched voltage and current ratings, making the 2N7002V a viable functional substitute for the 2N7002E-T1-E3 in most low-power switching applications. Designers should verify gate threshold and RDS(on) tolerances against their specific drive conditions before committing to a drop-in replacement.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
On-Resistance RDS(on) Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002E-T1-E3

Vishay Siliconix

Lifecycle
Active
Stock
7566 PCS
Package
SOT-23-3
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ
Part B

2N7002V

Fairchild Semiconductor

Lifecycle
Active
Stock
4358 PCS
Package
SOT-666
Series
Transistors - FETs, MOSFETs - Arrays
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002E-T1-E3 2N7002V
Supplier - Rochester Electronics, LLC
Part Status Active Active
FET Type N-Channel 2 N-Channel (Dual)
FET Feature - Logic Level Gate
Drain to Source Voltage (Vdss) 60 V 60V
Current - Continuous Drain(Id) @ 25°C 240mA (Ta) 280mA
Rds On(Max) @ Id Vgs 3Ohm @ 250mA, 10V 7.5Ohm @ 50mA, 5V
Vgs(th)(Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Input Capacitance(Ciss)(Max) @ Vds 21 pF @ 5 V 50pF @ 25V
Power - Max - 250mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Technology MOSFET (Metal Oxide) -
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V -
Gate Charge(Qg)(Max) @ Vgs 0.6 nC @ 4.5 V -
Vgs(Max) ±20V -
Power Dissipation (Max) 350mW (Ta) -
Compare RFQ