Part A
2N7002DW
onsemi
- Lifecycle
- Active
- Stock
- 6631 PCS
- Series
- Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Replacement verdict
Compatible functional replacement candidate
The 2N7002DW and 2N7002E-T1-E3 are both 60 V logic-level N-channel MOSFETs in SOT-23 packages, making the 2N7002E-T1-E3 a viable functional replacement candidate for the 2N7002DW in single-channel applications. However, the 2N7002DW is a dual-channel device, so designers must account for the difference in channel count and verify that the single MOSFET of the 2N7002E-T1-E3 can satisfy the circuit's switching requirements before substituting.
Channel Count
Validation required
Drain-Source Voltage Rating
High match
Package Type
High match
Continuous Drain Current
Validation required
Parts at a glance
Part B
2N7002E-T1-E3
Vishay Siliconix
- Lifecycle
- Active
- Stock
- 7566 PCS
- Package
- SOT-23-3
- Series
- Transistors - FETs, MOSFETs - Single
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 2N7002DW | 2N7002E-T1-E3 | Why it matters |
|---|---|---|---|
| Channel Configuration | Dual N-Channel (two independent MOSFETs) | Single N-Channel | Determines how many independent switching elements are available; a dual device can replace two single devices but not vice versa. |
| Package / Mounting | SOT-363 (SC-70, 6-lead), surface mount | SOT-23 (TO-236, 3-lead), surface mount | Footprint and pin count must match the PCB layout for a drop-in substitution. |
| Drain-Source Voltage (VDS) | 60 V | 60 V | Maximum voltage the device can block; must meet or exceed circuit rail and transient levels. |
| Continuous Drain Current (ID) | 115 mA per channel | 240 mA | Sets the maximum load current the device can carry continuously without exceeding thermal limits. |
| Drain-Source On-Resistance (RDS(on)) | 7.5 Ω max at VGS = 10 V, ID = 0.05 A | 1.6 Ω max at VGS = 10 V, ID = 0.5 A | Lower on-resistance reduces conduction losses and voltage drop across the switch. |
| Gate Threshold Voltage (VGS(th)) | 1.0 V min, 2.0 V max at VDS = VGS, ID = 250 µA | 1.0 V min, 2.5 V max at VDS = VGS, ID = 250 µA | Determines the minimum gate drive voltage needed to turn the device on reliably. |
| Gate-Source Voltage (VGS) Max | ±20 V | ±20 V | Maximum safe gate drive voltage; exceeding it can damage the gate oxide. |
| Power Dissipation (PD) | 200 mW per channel | 350 mW | Limits how much power the device can dissipate; affects thermal design and safe operating area. |
| Input Capacitance (Ciss) | 50 pF typ at VDS = 25 V, VGS = 0 V, f = 1 MHz | 20 pF typ at VDS = 25 V, VGS = 0 V, f = 1 MHz | Affects switching speed and gate drive requirements; lower capacitance enables faster switching. |
| Operating Junction Temperature (TJ) | -55 °C to +150 °C | -55 °C to +150 °C | Defines the thermal operating window for the device in the application environment. |
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002DW | 2N7002E-T1-E3 |
|---|---|---|
| Part Status | Active | Active |
| FET Type | - | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | - | 240mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | - | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | - | 3Ohm @ 250mA, 10V |
| Vgs(th)(Max) @ Id | - | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | - | 0.6 nC @ 4.5 V |
| Vgs(Max) | - | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | - | 21 pF @ 5 V |
| Power Dissipation (Max) | - | 350mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Base Product Number | 2N7002 | - |
| Configuration | 2 N-Channel (Dual) | - |
| FET Feature | Logic Level Gate | - |
| Current - Continuous Drain (Id) @ 25°C | 115mA | - |
| Rds On (Max) @ Id, Vgs | 7.5Ohm @ 50mA, 5V | - |
| Vgs(th) (Max) @ Id | 2V @ 250µA | - |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V | - |
| Power - Max | 200mW | - |
| Packaging | Cut Tape (CT), Tape & Reel (TR) | - |
Frequently asked questions
What are the main differences between the 2N7002DW and the 2N7002E-T1-E3?
The 2N7002DW is a dual N-channel MOSFET offered in a single package containing two separate 2N7002-type devices, while the 2N7002E-T1-E3 is a single N-channel MOSFET in a SOT-23 package. The 2N7002DW is typically used where two independent switching devices are needed in one footprint, whereas the 2N7002E-T1-E3 is used for single-switch applications.
Are the 2N7002DW and 2N7002E-T1-E3 electrically identical per channel?
Both devices are based on the 2N7002 N-channel MOSFET characteristics, but they are not necessarily identical in all parameters. The 2N7002DW integrates two 2N7002-type MOSFETs, while the 2N7002E-T1-E3 is a single 2N7002E variant. Parameters such as on-resistance, threshold voltage, and capacitance should be verified from the respective manufacturer datasheets before design use.
Can the 2N7002DW be used as a direct substitute for the 2N7002E-T1-E3?
No, they are not direct substitutes. The 2N7002DW contains two MOSFETs in one package, while the 2N7002E-T1-E3 is a single MOSFET. Substitution would require verifying pinout, package footprint, thermal characteristics, and whether the additional second device in the 2N7002DW is acceptable or can be left unused.
What package types are used for the 2N7002DW and 2N7002E-T1-E3?
The 2N7002DW is commonly supplied in a dual-device package such as SOT-363 or equivalent 6-pin surface-mount package, depending on the manufacturer. The 2N7002E-T1-E3 is supplied in a SOT-23 3-pin surface-mount package. Package style and pin count must be confirmed from the specific manufacturer datasheet.
Which device is better for space-constrained designs requiring two switches?
The 2N7002DW is generally more suitable for space-constrained designs that require two independent N-channel MOSFET switches, because it integrates two devices in one package. The 2N7002E-T1-E3 would require two separate components to achieve the same function, increasing board area and component count.
Do both devices share the same voltage and current ratings?
Both are 2N7002-family N-channel MOSFETs and typically share similar voltage ratings, such as 60 V drain-source voltage, but current ratings and power dissipation can differ due to package and die differences. The 2N7002DW dual package may have different per-channel thermal limits than the single 2N7002E-T1-E3. Always verify ratings from the manufacturer datasheet.
What should be checked before replacing one with the other in an existing design?
Before replacement, verify pinout and package footprint, per-channel electrical parameters such as Vgs(th), Rds(on), and capacitance, thermal resistance, maximum power dissipation, and whether the design requires one or two MOSFETs. Also confirm that the replacement device meets the circuit's switching speed and drive requirements.
Are the 2N7002DW and 2N7002E-T1-E3 RoHS compliant?
RoHS compliance depends on the specific manufacturer and ordering part number. The 2N7002E-T1-E3 suffix often indicates a lead-free or RoHS-compliant version from certain manufacturers, but this must be confirmed from the manufacturer's datasheet or product page. The 2N7002DW may also be available in RoHS-compliant versions depending on the supplier.