2N7002DW vs 2N7002E-T1-E3
This in-depth comparison of the 2N7002DW and 2N7002E-T1-E3 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Package
SOT-23-3
Description
MOSFET 2N-CH 60V 0.115A SC88
MOSFET N-CH 60V 240MA SOT23-3
ProductStatus
-
Active
FETType
-
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)
-
60 V
Current-ContinuousDrain(Id)@25°C
-
240mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn)
-
4.5V, 10V
RdsOn(Max)@IdVgs
-
3Ohm @ 250mA, 10V
Vgs(th)(Max)@Id
-
2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs
-
0.6 nC @ 4.5 V
Vgs(Max)
-
±20V
InputCapacitance(Ciss)(Max)@Vds
-
21 pF @ 5 V
PowerDissipation(Max)
-
350mW (Ta)
OperatingTemperature
-
-55°C ~ 150°C (TJ)
MountingType
-
Surface Mount
Part Status
Active
-
Base Product Number
2N7002
-
Configuration
2 N-Channel (Dual)
-
FET Feature
Logic Level Gate
-
Rds On (Max) @ Id, Vgs
7.5Ohm @ 50mA, 5V
-
Power - Max
200mW
-
Packaging
Cut Tape (CT), Tape & Reel (TR)
-
