2N7002ET1G vs 2N7002CK

This in-depth comparison of the 2N7002ET1G and 2N7002CK provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002ET1G and 2N7002CK are both N-channel enhancement-mode MOSFETs in SOT-23 packages with comparable voltage and current ratings, making the 2N7002CK a viable functional substitute for the 2N7002ET1G in most low-power switching applications. Designers should verify gate threshold, on-resistance, and thermal characteristics against their specific circuit requirements before committing to a drop-in replacement.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
On-Resistance Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002ET1G

onsemi

Lifecycle
Active
Stock
4059 PCS
Package
SOT-23-3
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ
Part B

2N7002CK

Nexperia USA Inc.

Lifecycle
Active
Stock
1570 PCS
Package
SOT-23-3
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ

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RFQ Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002ET1G 2N7002CK
Part Status Active Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 60 V -
Current - Continuous Drain(Id) @ 25°C 260mA (Ta) -
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V -
Rds On(Max) @ Id Vgs 2.5Ohm @ 240mA, 10V -
Vgs(th)(Max) @ Id 2.5V @ 250µA -
Gate Charge(Qg)(Max) @ Vgs 0.81 nC @ 5 V -
Vgs(Max) ±20V -
Input Capacitance(Ciss)(Max) @ Vds 26.7 pF @ 25 V -
Power Dissipation (Max) 300mW (Tj) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
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