2N7002,215 vs 2N7002ET1G

This in-depth comparison of the 2N7002,215 and 2N7002ET1G provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002ET1G and 2N7002,215 are functionally equivalent N-channel enhancement-mode MOSFETs with matching voltage, current, and package ratings, making them suitable drop-in replacements for most low-power switching and level-shifting applications. Designers should verify gate threshold and RDS(on) tolerances against their specific circuit requirements before finalizing the substitution.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
Static Drain-Source On-Resistance Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002,215

Nexperia USA Inc.

Lifecycle
Active
Stock
6582 PCS
Package
SOT-23-3
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ
Part B

2N7002ET1G

onsemi

Lifecycle
Active
Stock
4059 PCS
Package
SOT-23-3
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002,215 2N7002ET1G
Series TrenchMOS™ -
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 300mA (Ta) 260mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 10V 4.5V, 10V
Rds On(Max) @ Id Vgs 5Ohm @ 500mA, 10V 2.5Ohm @ 240mA, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Vgs(Max) ±30V ±20V
Input Capacitance(Ciss)(Max) @ Vds 50 pF @ 10 V 26.7 pF @ 25 V
Power Dissipation (Max) 830mW (Ta) 300mW (Tj)
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Gate Charge(Qg)(Max) @ Vgs - 0.81 nC @ 5 V
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