2N7002K-T1-E3 vs 2N7002L Comparison

This in-depth comparison of the 2N7002L and 2N7002K-T1-E3 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
2N7002L

+BOM

2923 PCS | onsemi
2N7002K-T1-E3

+BOM

3495 PCS | Vishay Siliconix
Package SOT-23-3 SOT-23-3
Description MOSFET N-CH 60V 115MA SOT23-3 MOSFET N-CH 60V 300MA SOT23-3
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 115mA (Ta) 300mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 5V, 10V 4.5V, 10V
Rds On(Max) @ Id Vgs 7.5Ohm @ 500mA, 10V 2Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 50 pF @ 25 V 30 pF @ 25 V
Power Dissipation (Max) 200mW (Ta) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Series - TrenchFET®
Gate Charge(Qg)(Max) @ Vgs - 0.6 nC @ 4.5 V
Comparison Model : 2N7002L 2N7002K-T1-E3

+BOM RFQ