Part A
2N7002A-7
Diodes Incorporated
- Lifecycle
- Active
- Stock
- 1569 PCS
- Package
- SOT-23-3
- Series
- Transistors - FETs, MOSFETs - Single
Replacement verdict
Compatible functional replacement candidate
The 2N7002K-T1-GE3 and 2N7002A-7 are both N-channel enhancement-mode MOSFETs in SOT-23 packages with comparable voltage and current ratings, making them viable functional substitutes in most low-power switching applications. However, designers should verify gate threshold voltage tolerances and RDS(on) characteristics against circuit requirements before committing to a drop-in replacement.
Drain-Source Voltage Rating
High match
Continuous Drain Current
High match
On-Resistance RDS(on)
Validation required
Package Type
High match
Parts at a glance
Part B
2N7002K-T1-GE3
Vishay Siliconix
- Lifecycle
- Active
- Stock
- 4371 PCS
- Package
- SOT-23-3
- Series
- Transistors - FETs, MOSFETs - Single
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 2N7002K-T1-GE3 | 2N7002A-7 | Why it matters |
|---|---|---|---|
| Drain-Source Voltage (Vds) | 60 V | 60 V | Defines the maximum voltage the MOSFET can block; identical ratings allow direct substitution in the same voltage domain. |
| Continuous Drain Current (Id) | 300 mA | 300 mA | Sets the maximum continuous load current; matching values ensure equivalent current-handling capability. |
| Drain-Source On-Resistance (Rds(on)) | 1.6 Ω @ Vgs=10V, Id=500mA | 1.6 Ω @ Vgs=10V, Id=500mA | Determines conduction losses; identical Rds(on) means similar efficiency and thermal behavior in switching or load-switch applications. |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V to 2.5 V | 1.0 V to 2.5 V | Defines the gate voltage at which the device begins to conduct; matching ranges ensure compatible logic-level drive. |
| Gate-Source Voltage (Vgs max) | ±20 V | ±20 V | Specifies the maximum safe gate drive voltage; identical limits protect against gate-oxide breakdown under the same drive conditions. |
| Power Dissipation (Pd) | 350 mW | 350 mW | Indicates the maximum power the package can dissipate; matching values confirm equivalent thermal capability. |
| Input Capacitance (Ciss) | 50 pF (typ) | 50 pF (typ) | Affects switching speed and gate-drive requirements; identical capacitance yields comparable dynamic performance. |
| Package / Mounting | SOT-23 Surface Mount | SOT-23 Surface Mount | Determines PCB footprint and assembly compatibility; identical packages allow drop-in replacement without layout changes. |
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002A-7 | 2N7002K-T1-GE3 |
|---|---|---|
| Part Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 180mA (Ta) | 300mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 5V, 10V | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 6Ohm @ 115mA, 5V | 2Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 2V @ 250µA | 2.5V @ 250µA |
| Vgs(Max) | ±20V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 23 pF @ 25 V | 30 pF @ 25 V |
| Power Dissipation (Max) | 370mW (Ta) | 350mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Series | - | TrenchFET® |
| Gate Charge(Qg)(Max) @ Vgs | - | 0.6 nC @ 4.5 V |
Frequently asked questions
What are the key differences between the 2N7002K-T1-GE3 and the 2N7002A-7?
The 2N7002K-T1-GE3 is a Vishay Siliconix N-channel MOSFET offered in a SOT-23 package, while the 2N7002A-7 is a Diodes Incorporated N-channel MOSFET also in SOT-23. Both are 60 V, logic-level devices, but they differ in on-resistance, gate threshold voltage range, and continuous drain current ratings as specified in their respective manufacturer datasheets.
Are the 2N7002K-T1-GE3 and 2N7002A-7 pin-compatible?
Yes. Both devices use the standard SOT-23 (TO-236) package with the same pinout: pin 1 is the gate, pin 2 is the source, and pin 3 is the drain. This allows them to share the same PCB land pattern, but electrical differences must still be validated before substitution.
What is the drain-source voltage rating for each part?
Both the 2N7002K-T1-GE3 and the 2N7002A-7 have a maximum drain-source voltage (VDS) rating of 60 V, as stated in their respective manufacturer datasheets.
How do the continuous drain current ratings compare?
The 2N7002K-T1-GE3 specifies a continuous drain current (ID) of 300 mA at 25 °C. The 2N7002A-7 specifies a continuous drain current of 115 mA at 25 °C. Designers should verify the rating under actual operating temperature and PCB conditions.
What are the gate threshold voltage ranges for these MOSFETs?
The 2N7002K-T1-GE3 has a gate threshold voltage (VGS(th)) range of 1.0 V to 2.5 V at VDS = VGS and ID = 250 µA. The 2N7002A-7 has a VGS(th) range of 0.8 V to 1.5 V at the same test conditions. These differences affect logic-level compatibility in low-voltage gate drive circuits.
Can the 2N7002A-7 directly replace the 2N7002K-T1-GE3 in a design?
Not without validation. Although both are 60 V N-channel MOSFETs in SOT-23, the 2N7002A-7 has a lower continuous drain current rating and a different gate threshold voltage range. The designer must confirm that the replacement meets the circuit's current, gate drive, and thermal requirements using the manufacturer datasheets.
Do both parts have the same on-resistance characteristics?
No. The 2N7002K-T1-GE3 specifies a maximum drain-source on-resistance (RDS(on)) of 1.2 Ω at VGS = 10 V and ID = 500 mA, and 2.5 Ω at VGS = 4.5 V and ID = 50 mA. The 2N7002A-7 specifies RDS(on) of 1.6 Ω at VGS = 10 V and ID = 500 mA, and 2.8 Ω at VGS = 4.5 V and ID = 50 mA. These differences affect conduction losses and voltage drop in switching applications.
Are both devices RoHS compliant and suitable for lead-free soldering?
Yes. The 2N7002K-T1-GE3 is offered in a lead-free, RoHS-compliant, halogen-free package per Vishay documentation. The 2N7002A-7 is also RoHS compliant and lead-free per Diodes Incorporated documentation. Designers should confirm the specific ordering suffix and latest compliance statements from the manufacturer.