2N7002K-T1-GE3 vs 2N7002CK

This in-depth comparison of the 2N7002K-T1-GE3 and 2N7002CK provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

2N7002K-T1-GE3

Vishay Siliconix

Lifecycle: Active
Stock: 4371 PCS
Package: SOT-23-3
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Part B

2N7002CK

Nexperia USA Inc.

Lifecycle: Active
Stock: 1570 PCS
Package: SOT-23-3
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	2N7002K-T1-GE3	2N7002CK
Part Status	Active	Active
Series	TrenchFET®	-
FET Type	N-Channel	-
Technology	MOSFET (Metal Oxide)	-
Drain to Source Voltage (Vdss)	60 V	-
Current - Continuous Drain(Id) @ 25°C	300mA (Ta)	-
Drive Voltage(Max Rds On Min Rds On)	4.5V, 10V	-
Rds On(Max) @ Id Vgs	2Ohm @ 500mA, 10V	-
Vgs(th)(Max) @ Id	2.5V @ 250µA	-
Gate Charge(Qg)(Max) @ Vgs	0.6 nC @ 4.5 V	-
Vgs(Max)	±20V	-
Input Capacitance(Ciss)(Max) @ Vds	30 pF @ 25 V	-
Power Dissipation (Max)	350mW (Ta)	-
Operating Temperature	-55°C ~ 150°C (TJ)	-
Mounting Type	Surface Mount	-

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