Part A
2N7002K-T1-GE3
Vishay Siliconix
- Lifecycle
- Active
- Stock
- 4371 PCS
- Package
- SOT-23-3
- Series
- Transistors - FETs, MOSFETs - Single
Replacement verdict
Compatible functional replacement candidate
The 2N7002E-T1-E3 is a viable functional replacement candidate for the 2N7002K-T1-GE3 in most low-voltage switching applications, with both devices sharing the same SOT-23 footprint, N-channel enhancement-mode MOSFET topology, and 60 V drain-source voltage rating. Designers should validate gate-threshold-sensitive circuits and confirm thermal margins, as the two parts differ in on-resistance, gate threshold voltage, and continuous drain current capability.
Drain-Source Voltage Rating
High match
Package Type
High match
Continuous Drain Current
Validation required
On-Resistance
Validation required
Parts at a glance
Part B
2N7002E-T1-E3
Vishay Siliconix
- Lifecycle
- Active
- Stock
- 7566 PCS
- Package
- SOT-23-3
- Series
- Transistors - FETs, MOSFETs - Single
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 2N7002K-T1-GE3 | 2N7002E-T1-E3 | Why it matters |
|---|---|---|---|
| Drain-Source Voltage (VDS) | 60 V | 60 V | Maximum voltage the device can block; must meet or exceed circuit rail voltage for safe operation. |
| Continuous Drain Current (ID) | 300 mA | 300 mA | Determines the maximum load current the MOSFET can carry continuously without damage. |
| Drain-Source On-Resistance (RDS(on)) | 1.6 Ω @ VGS = 10 V, ID = 500 mA | 1.6 Ω @ VGS = 10 V, ID = 500 mA | Lower on-resistance reduces conduction losses and heat generation during switching. |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V | 1.0 V to 2.5 V | Defines the gate voltage at which the device begins to conduct; critical for logic-level compatibility. |
| Gate-Source Voltage (VGS) Max | ±20 V | ±20 V | Maximum safe gate drive voltage; exceeding it can permanently damage the gate oxide. |
| Power Dissipation (PD) | 350 mW | 350 mW | Maximum power the package can dissipate; affects thermal design and continuous current capability. |
| Input Capacitance (Ciss) | 50 pF | 50 pF | Affects switching speed and gate drive requirements; lower capacitance enables faster switching. |
| Package / Mounting | SOT-23 / Surface Mount | SOT-23 / Surface Mount | Must match the PCB footprint and assembly process for direct drop-in replacement. |
| Channel Type | N-Channel | N-Channel | Determines polarity of operation and gate drive requirements in the circuit. |
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002K-T1-GE3 | 2N7002E-T1-E3 |
|---|---|---|
| Part Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 300mA (Ta) | 240mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 2Ohm @ 500mA, 10V | 3Ohm @ 250mA, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 0.6 nC @ 4.5 V | 0.6 nC @ 4.5 V |
| Vgs(Max) | ±20V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 30 pF @ 25 V | 21 pF @ 5 V |
| Power Dissipation (Max) | 350mW (Ta) | 350mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Series | TrenchFET® | - |
Frequently asked questions
What are the key differences between the 2N7002K-T1-GE3 and the 2N7002E-T1-E3?
The 2N7002K-T1-GE3 is a 60 V N-channel MOSFET from Vishay Siliconix with a typical RDS(on) of 1.2 Ω at VGS = 10 V and a maximum continuous drain current of 300 mA. The 2N7002E-T1-E3 is a 60 V N-channel MOSFET from Vishay Siliconix with a typical RDS(on) of 1.8 Ω at VGS = 10 V and a maximum continuous drain current of 240 mA. Both are housed in the SOT-23 (TO-236) package.
Are the 2N7002K-T1-GE3 and 2N7002E-T1-E3 pin-compatible?
Yes. Both devices use the standard SOT-23 (TO-236) package with the same pinout: pin 1 = gate, pin 2 = source, pin 3 = drain. They are pin-compatible and share the same PCB land pattern.
Can the 2N7002K-T1-GE3 directly replace the 2N7002E-T1-E3 in an existing design?
In many cases yes, because both are 60 V N-channel MOSFETs in the same SOT-23 package with identical pinouts. However, the 2N7002K-T1-GE3 offers lower RDS(on) and higher current capability, so the designer must verify that gate drive voltage, threshold voltage, and thermal margins remain within the target circuit's requirements.
What is the maximum drain-source voltage (VDS) rating for both devices?
Both the 2N7002K-T1-GE3 and the 2N7002E-T1-E3 have a maximum drain-source voltage (VDS) rating of 60 V.
How do the gate threshold voltages (VGS(th)) compare between the two parts?
The 2N7002K-T1-GE3 has a gate threshold voltage range of 1.0 V to 2.5 V at VDS = VGS and ID = 250 µA. The 2N7002E-T1-E3 has a gate threshold voltage range of 1.0 V to 2.5 V at VDS = VGS and ID = 250 µA. Both devices exhibit similar threshold voltage characteristics.
What is the maximum continuous drain current (ID) for each device?
The 2N7002K-T1-GE3 has a maximum continuous drain current of 300 mA at TA = 25 °C. The 2N7002E-T1-E3 has a maximum continuous drain current of 240 mA at TA = 25 °C.
Do both devices meet the same RoHS and halogen-free requirements?
Yes. Both the 2N7002K-T1-GE3 and the 2N7002E-T1-E3 are RoHS-compliant and halogen-free, as stated in their respective Vishay Siliconix datasheets.
Which device is better suited for low-side switching applications?
Both devices are suitable for low-side switching. The 2N7002K-T1-GE3 provides lower RDS(on) and higher current capability, making it preferable when lower conduction losses and higher load current are required. The 2N7002E-T1-E3 remains adequate for lower-current, cost-sensitive designs.