CSD17570Q5B vs CSD17576Q5B

This in-depth comparison of the CSD17570Q5B and CSD17576Q5B provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

CSD17570Q5B

Texas Instruments

Lifecycle: Active
Stock: 2925 PCS
Package: TDFN-8
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Part B

CSD17576Q5B

Texas Instruments

Lifecycle: Active
Stock: 2263 PCS
Package: TDFN-8
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

RFQ Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	CSD17570Q5B	CSD17576Q5B
Series	NexFET™	NexFET™
Part Status	Active	Active
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	30 V
Current - Continuous Drain(Id) @ 25°C	100A (Ta)	100A (Ta)
Drive Voltage(Max Rds On Min Rds On)	4.5V, 10V	4.5V, 10V
Rds On(Max) @ Id Vgs	0.69mOhm @ 50A, 10V	2mOhm @ 25A, 10V
Vgs(th)(Max) @ Id	1.9V @ 250µA	1.8V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	121 nC @ 4.5 V	68 nC @ 10 V
Vgs(Max)	±20V	±20V
Input Capacitance(Ciss)(Max) @ Vds	13600 pF @ 15 V	4430 pF @ 15 V
Power Dissipation (Max)	3.2W (Ta)	3.1W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

Compare RFQ