CSD87330Q3D vs CSD87313DMS

This in-depth comparison of the CSD87330Q3D and CSD87313DMS provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
CSD87330Q3D

+BOM

4721 PCS | Texas Instruments
CSD87313DMS

+BOM

6204 PCS | Texas Instruments
Package LDFN-8 WDFN-8
Description MOSFET 2N-CH 30V 20A 8SON MOSFET 2 N-CHANNEL 30V 8WSON
Supplier - Texas Instruments
Series NexFET™ NexFET™
ProductStatus Active Active
FETType 2 N-Channel (Half Bridge) 2 N-Channel (Dual) Common Drain
FETFeature Logic Level Gate Standard
DraintoSourceVoltage(Vdss) 30V 30V
Vgs(th)(Max)@Id 2.1V @ 250µA 1.25V @ 250µA
GateCharge(Qg)(Max)@Vgs 5.8nC @ 4.5V 28nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds 900pF @ 15V 4290pF @ 15V
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Surface Mount Surface Mount
Current-ContinuousDrain(Id)@25°C 20A -
Power-Max 6W -
Comparison Model : CSD87330Q3D CSD87313DMS

+BOM RFQ