CSD87331Q3D vs CSD87330Q3D

This in-depth comparison of the CSD87331Q3D and CSD87330Q3D provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

CSD87331Q3D

Texas Instruments

Lifecycle: Active
Stock: 6404 PCS
Package: LDFN-8
Series: Transistors - FETs, MOSFETs - Arrays

+BOM RFQ

Part B

CSD87330Q3D

Texas Instruments

Lifecycle: Active
Stock: 4721 PCS
Package: LDFN-8
Series: Transistors - FETs, MOSFETs - Arrays

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	CSD87331Q3D	CSD87330Q3D
Series	NexFET™	NexFET™
Part Status	Active	Active
FET Type	2 N-Channel (Half Bridge)	2 N-Channel (Half Bridge)
FET Feature	Standard	Logic Level Gate
Drain to Source Voltage (Vdss)	30V	30V
Current - Continuous Drain(Id) @ 25°C	15A	20A
Vgs(th)(Max) @ Id	2.1V, 1.2V @ 250µA	2.1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	3.2nC @ 4.5V	5.8nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds	518pF @ 15V	900pF @ 15V
Power - Max	6W	6W
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

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