CSD87331Q3D vs CSD87335Q3D Comparison
This in-depth comparison of the CSD87335Q3D and CSD87331Q3D provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Package
LDFN-8
Description
MOSFET 2N-CH 30V 8LSON
MOSFET 2N-CH 30V 15A 8LSON
Series
NexFET™
NexFET™
Part Status
Active
Active
Base Product Number
CSD87335Q3
-
Technology
MOSFET (Metal Oxide)
-
Configuration
2 N-Channel (Dual) Asymmetrical
-
Drain to Source Voltage (Vdss)
30V
30V
Vgs(th) (Max) @ Id
1.9V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs
7.4nC @ 4.5V
-
Input Capacitance (Ciss) (Max) @ Vds
1050pF @ 15V
-
Power - Max
6W
6W
Operating Temperature
-55°C ~ 150°C (TJ)
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Surface Mount
Packaging
Cut Tape (CT), Tape & Reel (TR)
-
FET Type
-
2 N-Channel (Half Bridge)
FET Feature
-
Standard
Current - Continuous Drain(Id) @ 25°C
-
15A
Vgs(th)(Max) @ Id
-
2.1V, 1.2V @ 250µA
Gate Charge(Qg)(Max) @ Vgs
-
3.2nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds
-
518pF @ 15V
