CSD87331Q3D vs CSD87313DMS Comparison

This in-depth comparison of the CSD87331Q3D and CSD87313DMS provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
CSD87331Q3D

+BOM

6404 PCS | Texas Instruments
CSD87313DMS

+BOM

6204 PCS | Texas Instruments
Package LDFN-8 WDFN-8
Description MOSFET 2N-CH 30V 15A 8LSON MOSFET 2 N-CHANNEL 30V 8WSON
Supplier - Texas Instruments
Series NexFET™ NexFET™
Part Status Active Active
FET Type 2 N-Channel (Half Bridge) 2 N-Channel (Dual) Common Drain
FET Feature Standard Standard
Drain to Source Voltage (Vdss) 30V 30V
Vgs(th)(Max) @ Id 2.1V, 1.2V @ 250µA 1.25V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 3.2nC @ 4.5V 28nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds 518pF @ 15V 4290pF @ 15V
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Current - Continuous Drain(Id) @ 25°C 15A -
Power - Max 6W -
Comparison Model : CSD87331Q3D CSD87313DMS

+BOM RFQ