CSD87331Q3D vs CSD87313DMS

This in-depth comparison of the CSD87331Q3D and CSD87313DMS provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine
Part A

CSD87331Q3D

Texas Instruments

Lifecycle
Active
Stock
6404 PCS
Package
LDFN-8
Series
Transistors - FETs, MOSFETs - Arrays
+BOM RFQ
Part B

CSD87313DMS

Texas Instruments

Lifecycle
Active
Stock
6204 PCS
Package
WDFN-8
Series
Transistors - FETs, MOSFETs - Arrays
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification CSD87331Q3D CSD87313DMS
Supplier - Texas Instruments
Series NexFET™ NexFET™
Part Status Active Active
FET Type 2 N-Channel (Half Bridge) 2 N-Channel (Dual) Common Drain
FET Feature Standard Standard
Drain to Source Voltage (Vdss) 30V 30V
Vgs(th)(Max) @ Id 2.1V, 1.2V @ 250µA 1.25V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 3.2nC @ 4.5V 28nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds 518pF @ 15V 4290pF @ 15V
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Current - Continuous Drain(Id) @ 25°C 15A -
Power - Max 6W -
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