FDD86102 vs FDD86110

This in-depth comparison of the FDD86110 and FDD86102 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
FDD86110

+BOM

2650 PCS | onsemi
FDD86102

+BOM

2389 PCS | onsemi
Package TO-252-3 TO-252-3
Description MOSFET N-CH 100V 12.5A/50A DPAK MOSFET N-CH 100V 8A/36A DPAK
Series PowerTrench® PowerTrench®
ProductStatus Active Active
FETType N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V 100 V
Current-ContinuousDrain(Id)@25°C 12.5A (Ta), 50A (Tc) 8A (Ta), 36A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V 6V, 10V
RdsOn(Max)@IdVgs 10.2mOhm @ 12.5A, 10V 24mOhm @ 8A, 10V
Vgs(th)(Max)@Id 4V @ 250µA 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 35 nC @ 10 V 19 nC @ 10 V
Vgs(Max) ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 2265 pF @ 50 V 1035 pF @ 50 V
PowerDissipation(Max) 3.1W (Ta), 127W (Tc) 3.1W (Ta), 62W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Surface Mount Surface Mount
Comparison Model : FDD86110 FDD86102

+BOM RFQ