FDG6316P vs FDG6318PZ

This in-depth comparison of the FDG6316P and FDG6318PZ provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

FDG6316P

onsemi

Lifecycle: Active
Stock: 4567 PCS
Series: Transistors - FETs, MOSFETs - FET, MOSFET Arrays

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Part B

FDG6318PZ

onsemi

Lifecycle: Active
Stock: 3452 PCS
Package: SC-88
Series: Transistors - FETs, MOSFETs - Arrays

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	FDG6316P	FDG6318PZ
Supplier	-	onsemi
Part Status	Obsolete	Obsolete
FET Type	-	2 P-Channel (Dual)
FET Feature	Logic Level Gate	Logic Level Gate
Drain to Source Voltage (Vdss)	12V	20V
Current - Continuous Drain(Id) @ 25°C	-	500mA
Rds On(Max) @ Id Vgs	-	780mOhm @ 500mA, 4.5V
Vgs(th)(Max) @ Id	-	1.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	-	1.62nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds	-	85.4pF @ 10V
Power - Max	300mW	300mW
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Series	PowerTrench®	-
Base Product Number	FDG6316	-
Technology	MOSFET (Metal Oxide)	-
Configuration	2 P-Channel (Dual)	-
Current - Continuous Drain (Id) @ 25°C	700mA	-
Rds On (Max) @ Id, Vgs	270mOhm @ 700mA, 4.5V	-
Vgs(th) (Max) @ Id	1.5V @ 250µA	-
Gate Charge (Qg) (Max) @ Vgs	2.4nC @ 4.5V	-
Input Capacitance (Ciss) (Max) @ Vds	146pF @ 6V	-
Packaging	Cut Tape (CT), Tape & Reel (TR)	-

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