FDG6316P vs FDG6332C-PG Comparison
This in-depth comparison of the FDG6316P and FDG6332C-PG provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Package
SC-88
Description
MOSFET 2P-CH 12V 0.7A SC88
MOSFET N P-CH 20V SC70-6
Supplier
-
onsemi
Series
PowerTrench®
PowerTrench®
Part Status
Obsolete
Obsolete
FET Type
-
N and P-Channel Complementary
FET Feature
Logic Level Gate
Standard
Drain to Source Voltage (Vdss)
12V
20V
Current - Continuous Drain(Id) @ 25°C
-
700mA (Ta), 600mA (Ta)
Rds On(Max) @ Id Vgs
-
300mOhm @ 700mA, 4.5V, 420mOhm @ 600mA, 4.5V
Vgs(th)(Max) @ Id
-
1.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs
-
1.5nC @ 4.5V, 2nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds
-
113pF @ 10V, 114pF @ 10V
Power - Max
300mW
300mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Surface Mount
Base Product Number
FDG6316
-
Technology
MOSFET (Metal Oxide)
-
Configuration
2 P-Channel (Dual)
-
Current - Continuous Drain (Id) @ 25°C
700mA
-
Rds On (Max) @ Id, Vgs
270mOhm @ 700mA, 4.5V
-
Vgs(th) (Max) @ Id
1.5V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs
2.4nC @ 4.5V
-
Input Capacitance (Ciss) (Max) @ Vds
146pF @ 6V
-
Packaging
Cut Tape (CT), Tape & Reel (TR)
-
