FDG6316P vs FDG6320C

This in-depth comparison of the FDG6316P and FDG6320C provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
FDG6316P

+BOM

4567 PCS | onsemi
FDG6320C

+BOM

1672 PCS | onsemi
Package TSSOP-6
Description MOSFET 2P-CH 12V 0.7A SC88 MOSFET N/P-CH 25V 220/140MA SC88
ProductStatus - Obsolete
FETType - N and P-Channel
FETFeature - Logic Level Gate
DraintoSourceVoltage(Vdss) - 25V
Current-ContinuousDrain(Id)@25°C - 220mA, 140mA
RdsOn(Max)@IdVgs - 4Ohm @ 220mA, 4.5V
Vgs(th)(Max)@Id - 1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs - 0.4nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds - 9.5pF @ 10V
Power-Max - 300mW
OperatingTemperature - -55°C ~ 150°C (TJ)
MountingType - Surface Mount
Series PowerTrench® -
Part Status Obsolete -
Base Product Number FDG6316 -
Technology MOSFET (Metal Oxide) -
Configuration 2 P-Channel (Dual) -
Rds On (Max) @ Id, Vgs 270mOhm @ 700mA, 4.5V -
Packaging Cut Tape (CT), Tape & Reel (TR) -
Comparison Model : FDG6316P FDG6320C

+BOM RFQ