FDMC8622 vs FDMC86116LZ
This in-depth comparison of the FDMC86116LZ and FDMC8622 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Package
WDFN-8
Description
MOSFET N-CH 100V 3.3A/7.5A 8MLP
MOSFET N-CH 100V 4A/16A 8MLP
Series
PowerTrench®
PowerTrench®
Part Status
Active
-
Base Product Number
FDMC86116
-
FET Type
N-Channel
-
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
-
Current - Continuous Drain (Id) @ 25°C
3.3A (Ta), 7.5A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
-
Rds On (Max) @ Id, Vgs
103mOhm @ 3.3A, 10V
-
Vgs(th) (Max) @ Id
2.2V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 10 V
-
Vgs (Max)
±20V
-
Input Capacitance (Ciss) (Max) @ Vds
310 pF @ 50 V
-
Power Dissipation (Max)
2.3W (Ta), 19W (Tc)
-
Operating Temperature
-55°C ~ 150°C (TJ)
-
Mounting Type
Surface Mount
-
Packaging
Cut Tape (CT), Tape & Reel (TR)
-
ProductStatus
-
Active
FETType
-
N-Channel
DraintoSourceVoltage(Vdss)
-
100 V
Current-ContinuousDrain(Id)@25°C
-
4A (Ta), 16A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)
-
6V, 10V
RdsOn(Max)@IdVgs
-
56mOhm @ 4A, 10V
Vgs(th)(Max)@Id
-
4V @ 250µA
GateCharge(Qg)(Max)@Vgs
-
7.3 nC @ 10 V
Vgs(Max)
-
±20V
InputCapacitance(Ciss)(Max)@Vds
-
402 pF @ 50 V
PowerDissipation(Max)
-
2.5W (Ta), 31W (Tc)
OperatingTemperature
-
-55°C ~ 150°C (TJ)
MountingType
-
Surface Mount
