FDMC8032L vs FDMC86116LZ Comparison
This in-depth comparison of the FDMC86116LZ and FDMC8032L provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Package
WDFN-8
Description
MOSFET N-CH 100V 3.3A/7.5A 8MLP
MOSFET 2N-CH 40V 7A 8-MLP
Series
PowerTrench®
PowerTrench®
Part Status
Active
Active
Base Product Number
FDMC86116
-
FET Type
N-Channel
2 N-Channel (Dual)
Technology
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss)
100 V
40V
Current - Continuous Drain (Id) @ 25°C
3.3A (Ta), 7.5A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
-
Rds On (Max) @ Id, Vgs
103mOhm @ 3.3A, 10V
-
Vgs(th) (Max) @ Id
2.2V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 10 V
-
Vgs (Max)
±20V
-
Input Capacitance (Ciss) (Max) @ Vds
310 pF @ 50 V
-
Power Dissipation (Max)
2.3W (Ta), 19W (Tc)
-
Operating Temperature
-55°C ~ 150°C (TJ)
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Surface Mount
Packaging
Cut Tape (CT), Tape & Reel (TR)
-
FET Feature
-
Logic Level Gate
Current - Continuous Drain(Id) @ 25°C
-
7A
Rds On(Max) @ Id Vgs
-
20mOhm @ 7A, 10V
Vgs(th)(Max) @ Id
-
3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs
-
11nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds
-
720pF @ 20V
Power - Max
-
1.9W
